آی سی NAND Flash TC58NVG1S3HTA00 ارجینالشناسه کالا: 2594

آی سی NAND Flash

TC58NVG1S3HTA00 

توضیحات

آی سی TC58NVG1S3HTA00 یک حافظه 2 گیگا بیتی با ساختار 256M x 8 BIT نوع CMOS NAND E2PROM و زمان دسترسی 25 میکرو ثانیه و تغذیه 3.3 ولتی می باشد. نوع تغذیه : تغذیه تکی ولتاژ تغذیه دیجیتال(+) (ولت) : 3.3 حداقل ولتاژ تغذیه تکی (ولت) : 3.135 حداکثر ولتاژ تغذیه تکی (ولت) : 3.63 مشخصات حافظه مقدار حافظه SRAM ( کیلو بایت ) : 2000000 زمان دسترسی (ns) : 25000 نوع ارتباط : ( Paralell) موازی

Description

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M * 8 BIT) CMOS NAND E2 PROM DESCRIPTION The TC58NVG1S3HTA00 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes * 64 pages ´ 2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes ´ 64 pages). The TC58NVG1S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.